mm1z2v0~mm1z75 features ? t o tal power dissipation: max. 500 mw ? small plastic package suitable for surface mounted design ? tolerance approximately 5% absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 500 mw junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 340 o c/w forward voltage at i f = 10 ma v f 0.9 v anod e 2 top vi ew simplified outline sod-123 and symbol 1 2 pi nni n g 1 pin cathode description 500mw silicon planar zener diodes 1 of 3 www.senocn.com z ibo seno electronic engineering co., ltd. mm1z2v0~mm1z75 a l l d a t a s h e e t
characteristics at t a = 25 o c ty pe marking code z ener voltage range 1) dynamic impedance 2) reverse leakage current v znom v zt at i zt z zt at i zt i r at v r v v ma max . ( ? ) ma max . ( a) v mm1z2v0 4a 2 1.8...2.15 5 100 5 120 0.5 mm1z2v2 4b 2.2 2.08...2.33 5 100 5 120 0.7 mm1z2v4 4c 2.4 2.28...2.56 5 100 5 120 1 mm1z2v7 4d 2.7 2.5...2.9 5 110 5 120 1 mm1z3v0 4e 3 2.8...3.2 5 120 5 50 1 mm1z3v3 4f 3.3 3.1...3.5 5 130 5 20 1 mm1z3v6 4h 3.6 3.4...3.8 5 130 5 10 1 mm1z3v9 4j 3.9 3.7...4.1 5 130 5 5 1 mm1z4v3 4k 4.3 4...4.6 5 130 5 5 1 mm1z4v7 4m 4.7 4.4...5 5 130 5 2 1 mm1z5v1 4n 5.1 4.8...5.4 5 130 5 2 1.5 mm1z5v6 4p 5.6 5.2...6 5 80 5 1 2.5 mm1z6v2 4r 6.2 5.8...6.6 5 50 5 1 3 mm1z6v8 4x 6.8 6.4...7.2 5 30 5 0.5 3.5 mm1z7v5 4y 7.5 7...7.9 5 30 5 0.5 4 mm1z8v2 4z 8.2 7.7...8.7 5 30 5 0.5 5 mm1z9v1 5a 9.1 8.5...9.6 5 30 5 0.5 6 mm1z10 5b 10 9.4...10.6 5 30 5 0.1 7 mm1z11 5c 11 10.4...11.6 5 30 5 0.1 8 mm1z 12 5d 12 11.4...12.7 5 35 5 0.1 9 mm1z13 5e 13 12.4...14.1 5 35 5 0.1 10 mm1z15 5f 15 13.8...15.6 5 40 5 0.1 11 mm1z 16 5h 16 15.3...17.1 5 40 5 0.1 12 mm1z18 5j 18 16.8...19.1 5 45 5 0.1 13 mm1z20 5k 20 18.8...21.2 5 50 5 0.1 15 mm1z 22 5m 22 20.8...23.3 5 55 5 0.1 17 mm1z24 5n 24 22.8...25.6 5 60 5 0.1 19 mm1z27 5p 27 25.1...28.9 5 70 2 0.1 21 mm1z 30 5r 30 28...32 5 80 2 0.1 23 mm1z33 5x 33 31...35 5 80 2 0.1 25 mm1z36 5y 36 34...38 5 90 2 0.1 27 mm1z 39 5z 39 37...41 2.5 100 2 2 30 MM1Z43 6a 43 40...46 2.5 130 2 2 33 mm1z47 6b 47 44...50 2.5 150 2 2 36 mm1z 51 6c 51 48...54 2.5 180 2 1 39 mm1z56 6d 56 52...60 2.5 180 2 1 43 mm1z62 6e 62 58...66 2.5 200 2 0.2 47 mm1z 68 6f 68 64...72 2.5 250 2 0.2 52 mm1z75 6h 75 70...79 2.5 300 2 0.2 57 1) v z is tested w i th pulses (20 ms). 2) z zt is measured at i z by given a very small a.c. current signal. 2 of 4 www.senocn.com z ibo seno electronic engineering co., ltd. mm1z2v0~mm1z75 mm1z2v0~mm1z75 a l l d a t a s h e e t
iz 0 0 10 20 vz 30 40 v 8 ma test cu r rent iz 5ma 10 20 30 0 brea kdown characteristics t j = constant (pulsed) 01 23 test current iz 5ma 10 20 45 7 6 vz tj=25 c o 10 9 v iz 30 40 brea kdown characteristics t j = constant (pulsed) tj=25 c 50 ma o 2v7 3v3 3v 9 4v7 5v6 6v8 8v2 10 12 15 18 22 27 33 am bi ent temperature: ta ( c) o 0 25 100 15 0 0 20 0 400 600 po we r dissipation: ptot (mw) po w er dissipation vs ambient temperature 50 75 125 500 300 100 3 of 4 www.senocn.com z ibo seno electronic engineering co., ltd. mm1z2v0~mm1z75 mm1z2v0~mm1z75 a l l d a t a s h e e t
package outline plastic surface mounted package; 2 leads sod-123fl e mm uni t a b c de hv all ro un d d b c a a h h e p p e 1.1 5 1. 05 0.6 0.5 0.135 0.100 2.7 2.6 1.65 1.55 3.85 3.55 0.2 o 5 4 of 4 www.senocn.com z ibo seno electronic engineering co., ltd. mm1z2v0~mm1z75 mm1z2v0~mm1z75 a l l d a t a s h e e t
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